物料参数
Architecture: | FET / CMOS Input, Voltage FB |
Number of channels: | 1 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 6 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 12.6 |
GBW (typ) (MHz): | 400 |
BW at Acl (MHz): | 800 |
Acl, min spec gain (V/V): | 1 |
Slew rate (typ) (V/µs): | 1000 |
Vn at flatband (typ) (nV√Hz): | 4.5 |
Vn at 1 kHz (typ) (nV√Hz): | 7.5 |
Iq per channel (typ) (mA): | 23.5 |
Vos (offset voltage at 25°C) (max) (mV): | 0.25 |
Rail-to-rail: | No |
Features: | Shutdown |
Rating: | Catalog |
Operating temperature range (°C): | -40 to 105 |
CMRR (typ) (dB): | 110 |
Input bias current (max) (pA): | 20 |
Offset drift (typ) (µV/°C): | 1 |
Iout (typ) (mA): | 80 |
2nd harmonic (dBc): | -100 |
3rd harmonic (dBc): | -120 |
Frequency of harmonic distortion measurement (MHz): | 1 |
Architecture: | FET / CMOS Input, Voltage FB |
Number of channels: | 1 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 6 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 12.6 |
GBW (typ) (MHz): | 400 |
BW at Acl (MHz): | 800 |
Acl, min spec gain (V/V): | 1 |
Slew rate (typ) (V/µs): | 1000 |
Vn at flatband (typ) (nV√Hz): | 4.5 |
Vn at 1 kHz (typ) (nV√Hz): | 7.5 |
Iq per channel (typ) (mA): | 23.5 |
Vos (offset voltage at 25°C) (max) (mV): | 0.25 |
Rail-to-rail: | No |
Features: | Shutdown |
Rating: | Catalog |
Operating temperature range (°C): | -40 to 105 |
CMRR (typ) (dB): | 110 |
Input bias current (max) (pA): | 20 |
Offset drift (typ) (µV/°C): | 1 |
Iout (typ) (mA): | 80 |
2nd harmonic (dBc): | -100 |
3rd harmonic (dBc): | -120 |
Frequency of harmonic distortion measurement (MHz): | 1 |
无库存